To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum 采用化学腐蚀实验方法研究抛光液中氧化剂种类和浓度以及抛光液ph值对钽酸锂晶片化学去除的影响。